NVTFS4C06NTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 30A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Power Dissipation-Max :

3.1W Ta 37W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Package / Case :

8-PowerWDFN

Transistor Element Material :

SILICON

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.2V @ 250µA

JESD-30 Code :

S-PDSO-F5

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Finish :

Tin (Sn)

Published :

2014

Drain-source On Resistance-Max :

0.0061Ohm

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

71A

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

34 mJ

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1683pF @ 15V

Pulsed Drain Current-Max (IDM) :

367A

Continuous Drain Current (ID) :

21A

Operating Temperature :

-55°C~175°C TJ

Reference Standard :

AEC-Q101

Vgs (Max) :

±20V

Number of Terminations :

5

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free