NVMYS2D1N04CLTWG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

JESD-609 Code :

e3

Power Dissipation-Max :

3.9W Ta 83W Tc

Factory Lead Time :

33 Weeks

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Pbfree Code :

yes

Vgs (Max) :

±20V

Series :

Automotive, AEC-Q101

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 50A, 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

29A Ta 132A Tc

Reach Compliance Code :

not_compliant

Package / Case :

SOT-1023, 4-LFPAK

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)