NVMTS1D2N08H
- Mfr.Part #
- NVMTS1D2N08H
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 43.5A/337A 8DFNW
- Stock
- 6,108
- In Stock :
- 6,108
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 5W Ta 300W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 43.5A Ta 337A Tc
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 90A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 590μA
- Drain to Source Voltage (Vdss) :
- 80V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 33 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 147nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 10100pF @ 40V
- Series :
- Automotive, AEC-Q101
- Package / Case :
- 8-PowerTDFN
- Datasheets
- NVMTS1D2N08H

N-Channel Tape & Reel (TR) 1.1m Ω @ 90A, 10V ±20V 10100pF @ 40V 147nC @ 10V 80V 8-PowerTDFN
NVMTS1D2N08H Description
NVMTS1D2N08H is an 80V Single N-Channel Power MOSFET. The onsemi NVMTS1D2N08H can be applied in Switching Power Supply, Power switches (High Side Driver, Low Side Driver, H-Bridges, etc.), and 48V Systems due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NVMTS1D2N08H is in the DFNW-8 package with 300W power dissipation.
NVMTS1D2N08H Features
-
Small Footprint (8x8 mm) for Compact Design
-
Low RDS(on) to Minimize Conduction Losses
-
Low QG and Capacitance to Minimize Driver Losses
-
AEC?Q101 Qualified and PPAP Capable
-
Pb?Free and are RoHS Compliant
NVMTS1D2N08H Applications
-
Switching Power Supply
-
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
-
48 V Systems
-
Load Switch
-
DC/DC Converter
-
Motor Control
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