NVHL027N65S3F

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Mfr.Part #
NVHL027N65S3F
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 650V 75A TO247-3
Stock
518
In Stock :
518

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
27.4m Ω @ 35A, 10V
RoHS Status :
Non-RoHS Compliant
FET Type :
N-Channel
JESD-609 Code :
e3
Vgs (Max) :
±30V
Terminal Finish :
Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
227nC @ 10V
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Input Capacitance (Ciss) (Max) @ Vds :
7780pF @ 400V
Power Dissipation-Max :
595W Tc
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
5V @ 3mA
Pbfree Code :
yes
Series :
Automotive, AEC-Q101, SuperFET® III, FRFET®
Package / Case :
TO-247-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
4 Weeks
Reach Compliance Code :
not_compliant
Drain to Source Voltage (Vdss) :
650V
Moisture Sensitivity Level (MSL) :
Not Applicable
Datasheets
NVHL027N65S3F
Introducing Transistors - FETs, MOSFETs - Single onsemi NVHL027N65S3F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, NVHL027N65S3F pinout, NVHL027N65S3F datasheet PDF, NVHL027N65S3F amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVHL027N65S3F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVHL027N65S3F


N-Channel 27.4m Ω @ 35A, 10V ±30V 7780pF @ 400V 227nC @ 10V 650V TO-247-3

NVHL027N65S3F Description


SUPERFET III MOSFET is ON Semiconductor's brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET's optimized reverse recovery performance of body diode can remove additional component and improve system reliability.



NVHL027N65S3F Features


  • 700 V @ TJ = 150 °C

  • Typ. RDS(on) = 21.5 mΩ

  • Ultra Low Gate Charge (Typ. Qg = 227 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 1880 pF)

  • 100% Avalanche Tested

  • AEC?Q101 Qualified and PPAP Capable

  • Non-RoHS Compliant



NVHL027N65S3F Applications


  • Automotive On Board Charger HEV?EV

  • Automotive DC/DC Converter for HEV?EV

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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