NVC6S5A444NLZT2G
- Mfr.Part #
- NVC6S5A444NLZT2G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 3.5A 6CPH
- Stock
- 40,771
- In Stock :
- 40,771
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Form :
- Gull wing
- Number of Terminations :
- 6
- JESD-30 Code :
- R-PDSO-G6
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 60V
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- RoHS Compliant
- Drain Current-Max (Abs) (ID) :
- 3.5A
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Ta
- Drain-source On Resistance-Max :
- 0.078Ohm
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2.6V @ 1mA
- Series :
- Automotive, AEC-Q101
- Power Dissipation-Max :
- 970mW Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 505pF @ 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e6
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 2A, 10V
- DS Breakdown Voltage-Min :
- 60V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 5 Weeks
- Datasheets
- NVC6S5A444NLZT2G

N-Channel Tape & Reel (TR) 78m Ω @ 2A, 10V ±20V 505pF @ 20V 10nC @ 10V 60V SOT-23-6 Thin, TSOT-23-6
NVC6S5A444NLZT2G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 505pF @ 20V.3.5A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NVC6S5A444NLZT2G Features
a 60V drain to source voltage (Vdss)
NVC6S5A444NLZT2G Applications
There are a lot of ON Semiconductor
NVC6S5A444NLZT2G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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