NVC3S5A51PLZT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Number of Terminations :

3

JESD-30 Code :

R-PDSO-G3

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.2W Ta

Factory Lead Time :

12 Weeks

Reference Standard :

AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

2.6V @ 1mA

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

250m Ω @ 1A, 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

1.7A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e6

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

262pF @ 20V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Position :

Dual

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.25Ohm

FET Type :

P-Channel