NVB25P06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

72ns

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.082Ohm

Mounting Type :

Surface Mount

Power Dissipation-Max :

120W Tj

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

43 ns

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

600 mJ

Pin Count :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

190 ns

Number of Pins :

3

Continuous Drain Current (ID) :

27.5A

Surface Mount :

yes

Number of Terminations :

2

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

15V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 6 days ago)

Turn On Delay Time :

14 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

FET Type :

P-Channel

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

82m Ω @ 25A, 10V

Factory Lead Time :

2 Weeks

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

HTS Code :

8541.29.00.95

DS Breakdown Voltage-Min :

60V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Vgs (Max) :

±15V

Pbfree Code :

yes

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

27.5A Ta