NVB25P06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Reference Standard :

AEC-Q101

Avalanche Energy Rating (Eas) :

600 mJ

Turn-Off Delay Time :

43 ns

Current - Continuous Drain (Id) @ 25°C :

27.5A Ta

Factory Lead Time :

2 Weeks

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

15V

Published :

2012

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Rise Time :

72ns

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Terminal Form :

Gull wing

Vgs (Max) :

±15V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

27.5A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

120W Tj

Pin Count :

3

Drain to Source Voltage (Vdss) :

60V

JESD-609 Code :

e3

Element Configuration :

Single

Number of Terminations :

2

DS Breakdown Voltage-Min :

60V

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Pulsed Drain Current-Max (IDM) :

80A

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

190 ns

FET Type :

P-Channel

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 6 days ago)

Surface Mount :

yes

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.082Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

RoHS Status :

RoHS Compliant

Turn On Delay Time :

14 ns

Rds On (Max) @ Id, Vgs :

82m Ω @ 25A, 10V