NVB25P06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Vgs (Max) :

±15V

Rise Time :

72ns

Drain-source On Resistance-Max :

0.082Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Power Dissipation-Max :

120W Tj

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

27.5A Ta

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

600 mJ

Radiation Hardening :

No

Transistor Application :

SWITCHING

Turn-Off Delay Time :

43 ns

DS Breakdown Voltage-Min :

60V

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Number of Elements :

1

Surface Mount :

yes

JESD-609 Code :

e3

Reference Standard :

AEC-Q101

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 6 days ago)

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

82m Ω @ 25A, 10V

Terminal Finish :

Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HTS Code :

8541.29.00.95

Pin Count :

3

Number of Pins :

3

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

60V

Turn On Delay Time :

14 ns

Factory Lead Time :

2 Weeks

Gate to Source Voltage (Vgs) :

15V

Continuous Drain Current (ID) :

27.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

80A

Transistor Element Material :

SILICON

Fall Time (Typ) :

190 ns

Packaging :

Tape and Reel (TR)

Number of Terminations :

2