NVATS5A113PLZT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Surface Mount :

yes

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

29.5m Ω @ 18A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Factory Lead Time :

5 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0295ohm

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

60W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 20V

Reference Standard :

AEC-Q101

JESD-609 Code :

e6

Avalanche Energy Rating (Eas) :

95 mJ

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

114A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

60V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

2.6V @ 1mA

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

38A Ta

Drain Current-Max (Abs) (ID) :

38A

Operating Temperature :

-55°C~175°C TJ