NVA4001NT1G

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Mfr.Part #
NVA4001NT1G
Manufacturer
onsemi
Package / Case
SOT-416
Datasheet
Download
Description
MOSFET N-CH 20V SC75
Stock
3,061
In Stock :
3,061

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
ECCN Code :
EAR99
Element Configuration :
Single
Rds On Max :
3 Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Published :
2007
Power Dissipation :
300mW
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
20V
Factory Lead Time :
8 Weeks
Gate to Source Voltage (Vgs) :
10V
Turn-Off Delay Time :
98 ns
JESD-609 Code :
e3
Min Operating Temperature :
-55°C
Fall Time (Typ) :
60 ns
Lead Free :
Lead Free
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tape and Reel (TR)
Number of Pins :
3
Continuous Drain Current (ID) :
238mA
Turn On Delay Time :
13 ns
Terminal Finish :
Tin (Sn)
Package / Case :
SOT-416
Drain to Source Resistance :
1.5Ohm
Drain to Source Voltage (Vdss) :
20V
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
300mW
Surface Mount :
yes
Rise Time :
15ns
Input Capacitance :
20pF
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Operating Temperature :
150°C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
NVA4001NT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVA4001NT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:SOT-416, NVA4001NT1G pinout, NVA4001NT1G datasheet PDF, NVA4001NT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVA4001NT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVA4001NT1G


Tape & Reel (TR) 20V SOT-416

NVA4001NT1G Overview


This device's continuous drain current (ID) is 238mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 98 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.5Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 20V drain to source voltage (Vdss).

NVA4001NT1G Features


a continuous drain current (ID) of 238mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 98 ns
single MOSFETs transistor is 1.5Ohm
a 20V drain to source voltage (Vdss)


NVA4001NT1G Applications


There are a lot of ON Semiconductor
NVA4001NT1G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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