NTY100N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

500 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

123A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Mounting Type :

Through Hole

JESD-30 Code :

R-PSIP-T3

Vgs (Max) :

±20V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

369A

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.01Ohm

Surface Mount :

No

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

123A

Reach Compliance Code :

Unknown

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

10m Ω @ 50A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-264-3, TO-264AA

Input Capacitance (Ciss) (Max) @ Vds :

10.11pF @ 25V

Drain to Source Voltage (Vdss) :

100V

Pin Count :

3

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

313W Tc

Pbfree Code :

yes

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40