NTTS2P03R2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Rise Time :

20ns

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.48A, 10V

Threshold Voltage :

-1.7V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

P-Channel

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Terminal Position :

Dual

Continuous Drain Current (ID) :

2.48A

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Published :

2001

Pin Count :

8

Number of Pins :

8

Fall Time (Typ) :

20 ns

Number of Terminations :

8

Terminal Form :

Gull wing

Power Dissipation-Max :

600mW Ta

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

ECCN Code :

EAR99

Turn-Off Delay Time :

40 ns

RoHS Status :

RoHS Compliant

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Current Rating :

-2.48A

Pbfree Code :

yes

Power Dissipation :

780mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-30V

Voltage - Rated DC :

-30V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 24V