NTTFS5826NLTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

8A

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

JESD-30 Code :

S-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 25V

Power Dissipation :

19W

Number of Pins :

8

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

REACH SVHC :

No SVHC

Width :

3.15mm

Number of Terminations :

5

Terminal Form :

Flat

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerWDFN

Element Configuration :

Single

Height :

750μm

Turn On Delay Time :

9 ns

Published :

2011

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.032Ohm

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Power Dissipation-Max :

3.1W Ta 19W Tc

Case Connection :

DRAIN

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

24m Ω @ 7.5A, 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

20 mJ

ECCN Code :

EAR99

Turn-Off Delay Time :

17 ns

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

18 Weeks

Number of Elements :

1

Drain to Source Breakdown Voltage :

60V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Threshold Voltage :

3V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Length :

3.15mm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Pbfree Code :

yes

Continuous Drain Current (ID) :

20A

Vgs(th) (Max) @ Id :

3V @ 250µA