NTTFS5820NLTWG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Pbfree Code :

yes

Transistor Element Material :

SILICON

Rise Time :

28ns

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

JESD-30 Code :

S-PDSO-F5

FET Type :

N-Channel

Number of Terminations :

5

Case Connection :

DRAIN

Radiation Hardening :

No

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 8.7A, 10V

Package / Case :

8-PowerWDFN

JESD-609 Code :

e3

Power Dissipation :

33W

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

11A Ta 37A Tc

Turn-Off Delay Time :

19 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Width :

3.15mm

Power Dissipation-Max :

2.7W Ta 33W Tc

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

37A

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Published :

2010

Length :

3.15mm

Fall Time (Typ) :

22 ns

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Pin Count :

8

Lead Free :

Lead Free

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1462pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Height :

800μm

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

10 ns

Number of Elements :

1

Number of Pins :

8