NTTFS5811NLTWG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Terminations :

5

Number of Elements :

1

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pin Count :

8

Length :

3.15mm

Power Dissipation :

33W

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.7W Ta 33W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 25V

Continuous Drain Current (ID) :

53A

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

65 mJ

JESD-30 Code :

S-PDSO-F5

Turn On Delay Time :

11 ns

Number of Pins :

8

FET Type :

N-Channel

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Package / Case :

8-PowerWDFN

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Turn-Off Delay Time :

21 ns

Current - Continuous Drain (Id) @ 25°C :

17A Ta 53A Tc

Drain to Source Breakdown Voltage :

40V

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 20A, 10V

Vgs (Max) :

±20V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Lead Free :

Lead Free

Nominal Vgs :

1.7 V

Fall Time (Typ) :

12 ns

Published :

2010

Width :

3.15mm

Surface Mount :

yes

Terminal Form :

Flat

Height :

800μm

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Terminal Finish :

Tin (Sn)

Rise Time :

30ns