NTTFS5811NLTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 25V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Radiation Hardening :

No

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 20A, 10V

Number of Elements :

1

Height :

800μm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Avalanche Energy Rating (Eas) :

65 mJ

Rise Time :

30ns

Terminal Form :

Flat

Published :

2010

Power Dissipation :

33W

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

JESD-609 Code :

e3

Threshold Voltage :

1.7V

Mounting Type :

Surface Mount

Element Configuration :

Single

Pin Count :

8

Package / Case :

8-PowerWDFN

Fall Time (Typ) :

12 ns

Continuous Drain Current (ID) :

53A

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

17A Ta 53A Tc

FET Type :

N-Channel

Resistance :

6.4mOhm

Vgs (Max) :

±20V

Width :

3.15mm

Length :

3.15mm

RoHS Status :

RoHS Compliant

JESD-30 Code :

S-PDSO-F5

Turn On Delay Time :

11 ns

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Nominal Vgs :

1.7 V

Number of Terminations :

5

Power Dissipation-Max :

2.7W Ta 33W Tc

Contact Plating :

Tin

Turn-Off Delay Time :

21 ns