NTTFS5116PLTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

52mOhm

JESD-30 Code :

S-PDSO-F5

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Turn On Delay Time :

15 ns

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Flat

Turn-Off Delay Time :

30 ns

Pin Count :

8

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

20A

Continuous Drain Current (ID) :

5.7A

Height :

750μm

Fall Time (Typ) :

37 ns

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Length :

3.15mm

Pulsed Drain Current-Max (IDM) :

76A

Drain to Source Breakdown Voltage :

-60V

Number of Pins :

8

JESD-609 Code :

e3

Width :

3.15mm

Power Dissipation-Max :

3.2W Ta 40W Tc

Pbfree Code :

yes

Radiation Hardening :

No

Mounting Type :

Surface Mount

Rise Time :

58ns

Contact Plating :

Tin

REACH SVHC :

No SVHC

Terminal Position :

Dual

Package / Case :

8-PowerWDFN

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta

Avalanche Energy Rating (Eas) :

45 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1258pF @ 30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Power Dissipation :

40W

Rds On (Max) @ Id, Vgs :

52m Ω @ 6A, 10V

Published :

2011

ECCN Code :

EAR99

Number of Terminations :

5

Threshold Voltage :

-3V