NTTFS4H07NTAG
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- Mfr.Part #
- NTTFS4H07NTAG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 18.5A/66A 8WDFN
- Stock
- 11,077
- In Stock ：
- 11,077
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 14.5 ns
- Operating Temperature :
- 150°C TJ
- Package / Case :
- 8-PowerWDFN
- Turn On Delay Time :
- 5 ns
- Pbfree Code :
- yes
- Published :
- 2014
- Number of Pins :
- 8
- Reach Compliance Code :
- not_compliant
- Fall Time (Typ) :
- 1.65 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Number of Channels :
- 1
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 2.64W Ta 33.8W Tc
- Rds On (Max) @ Id, Vgs :
- 4.8m Ω @ 30A, 10V
- Vgs (Max) :
- ±20V
- Rise Time :
- 28.3ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 771pF @ 12V
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 12.4nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain to Source Breakdown Voltage :
- 25V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 16 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 18.5A Ta 66A Tc
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 66A
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Datasheets
- NTTFS4H07NTAG
N-Channel Tape & Reel (TR) 4.8m Ω @ 30A, 10V ±20V 771pF @ 12V 12.4nC @ 10V 8-PowerWDFN
NTTFS4H07NTAG Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 771pF @ 12V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 66A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 14.5 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NTTFS4H07NTAG Features
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 14.5 ns
NTTFS4H07NTAG Applications
There are a lot of ON Semiconductor
NTTFS4H07NTAG applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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