NTTFS4H05NTAG
- Mfr.Part #
- NTTFS4H05NTAG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 22.4A/94A 8WDFN
- Stock
- 4,016
- In Stock :
- 4,016
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Number of Terminations :
- 5
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- S-PDSO-F5
- Current - Continuous Drain (Id) @ 25°C :
- 22.4A Ta 94A Tc
- Terminal Position :
- Dual
- Package / Case :
- 8-PowerWDFN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 22.4A
- Factory Lead Time :
- 16 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 18.9nC @ 10V
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 304A
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 94A
- Lead Free :
- Lead Free
- Published :
- 2015
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 30A, 10V
- Terminal Form :
- Flat
- Power Dissipation-Max :
- 2.66W Ta 46.3W Tc
- DS Breakdown Voltage-Min :
- 25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1205pF @ 12V
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NTTFS4H05NTAG

N-Channel Tape & Reel (TR) 3.3m Ω @ 30A, 10V ±20V 1205pF @ 12V 18.9nC @ 10V 25V 8-PowerWDFN
NTTFS4H05NTAG Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1205pF @ 12V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 94A.22.4A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 304A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 25V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NTTFS4H05NTAG Features
a continuous drain current (ID) of 94A
based on its rated peak drain current 304A.
a 25V drain to source voltage (Vdss)
NTTFS4H05NTAG Applications
There are a lot of ON Semiconductor
NTTFS4H05NTAG applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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