NTTFS4C25NTWG
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- Mfr.Part #
- NTTFS4C25NTWG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 5A/27A 8WDFN
- Stock
- 15,293
- In Stock ：
- 15,293
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Fall Time (Typ) :
- 3 ns
- Pbfree Code :
- yes
- Published :
- 2012
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 8 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 500pF @ 15V
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 30V
- Pin Count :
- 8
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 10 ns
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 27A
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 10.3nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 18 Weeks
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Package / Case :
- 8-PowerWDFN
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 690mW Ta 20.2W Tc
- Rise Time :
- 32ns
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta 27A Tc
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Datasheets
- NTTFS4C25NTWG
N-Channel Tape & Reel (TR) 17m Ω @ 10A, 10V ±20V 500pF @ 15V 10.3nC @ 10V 8-PowerWDFN
NTTFS4C25NTWG Overview
A device's maximum input capacitance is 500pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 27A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTTFS4C25NTWG Features
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 10 ns
NTTFS4C25NTWG Applications
There are a lot of ON Semiconductor
NTTFS4C25NTWG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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