NTTFS4C10NTWG
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- Mfr.Part #
- NTTFS4C10NTWG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.2A/44A 8WDFN
- Stock
- 2,187
- In Stock ：
- 2,187
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 790mW Ta 23.6W Tc
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Factory Lead Time :
- 18 Weeks
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 993pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 8-PowerWDFN
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 18.6nC @ 10V
- Pin Count :
- 8
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 8.2A Ta 44A Tc
- Published :
- 2013
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 44A
- Rds On (Max) @ Id, Vgs :
- 7.4m Ω @ 30A, 10V
- Surface Mount :
- yes
- Drain to Source Breakdown Voltage :
- 30V
- Datasheets
- NTTFS4C10NTWG
NTTFS4C10NTWG Documents
N-Channel Tape & Reel (TR) 7.4m Ω @ 30A, 10V ±20V 993pF @ 15V 18.6nC @ 10V 8-PowerWDFN
NTTFS4C10NTWG Overview
A device's maximum input capacitance is 993pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTTFS4C10NTWG Features
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 30V voltage
NTTFS4C10NTWG Applications
There are a lot of ON Semiconductor
NTTFS4C10NTWG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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