NTTFS4C08NTAG
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- Mfr.Part #
- NTTFS4C08NTAG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9.3A 8WDFN
- Stock
- 3,083
- In Stock ：
- 3,083
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 9.3A
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 5.9m Ω @ 30A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- Pin Count :
- 8
- Package / Case :
- 8-PowerWDFN
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 820mW Ta 25.5W Tc
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1113pF @ 15V
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 18.2nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Halogen Free :
- Halogen Free
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 9.3A Ta
- Radiation Hardening :
- No
- Factory Lead Time :
- 18 Weeks
- Element Configuration :
- Single
- Datasheets
- NTTFS4C08NTAG
N-Channel Tape & Reel (TR) 5.9m Ω @ 30A, 10V ±20V 1113pF @ 15V 18.2nC @ 10V 8-PowerWDFN
NTTFS4C08NTAG Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1113pF @ 15V.This device conducts a continuous drain current (ID) of 9.3A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NTTFS4C08NTAG Features
a continuous drain current (ID) of 9.3A
a drain-to-source breakdown voltage of 30V voltage
NTTFS4C08NTAG Applications
There are a lot of ON Semiconductor
NTTFS4C08NTAG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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