NTTFS4C06NTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Number of Terminations :

5

Published :

2014

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Factory Lead Time :

18 Weeks

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerWDFN

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0061Ohm

Surface Mount :

yes

Radiation Hardening :

No

Continuous Drain Current (ID) :

67A

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

11A Ta 67A Tc

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

JESD-30 Code :

S-PDSO-F5

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Power Dissipation-Max :

810mW Ta 31W Tc

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 30A, 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3366pF @ 15V

ECCN Code :

EAR99

Number of Elements :

1

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Pin Count :

8

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drain Current-Max (Abs) (ID) :

11A

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant