NTTFS4985NFTAG
- Mfr.Part #
- NTTFS4985NFTAG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16.3A/64A 8WDFN
- Stock
- 12,628
- In Stock :
- 12,628
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 11 ns
- Mounting Type :
- Surface Mount
- Number of Pins :
- 8
- Published :
- 2012
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- Drain-source On Resistance-Max :
- 0.0052Ohm
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 20 ns
- Radiation Hardening :
- No
- Drain Current-Max (Abs) (ID) :
- 16.3A
- Element Configuration :
- Single
- Power Dissipation :
- 2.69W
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 5.4 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-PowerWDFN
- Pulsed Drain Current-Max (IDM) :
- 192A
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 16.3A Ta 64A Tc
- Number of Terminations :
- 5
- JESD-30 Code :
- R-PDSO-F5
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 20A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 29.4nC @ 10V
- Rise Time :
- 24ns
- Factory Lead Time :
- 18 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 2075pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 1.47W Ta 22.73W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 64A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 52 mJ
- Pin Count :
- 8
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 30V
- Datasheets
- NTTFS4985NFTAG

N-Channel Tape & Reel (TR) 3.5m Ω @ 20A, 10V ±20V 2075pF @ 15V 29.4nC @ 10V 8-PowerWDFN
NTTFS4985NFTAG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 52 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2075pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 16.3A.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 192A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTTFS4985NFTAG Features
the avalanche energy rating (Eas) is 52 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 192A.
NTTFS4985NFTAG Applications
There are a lot of ON Semiconductor
NTTFS4985NFTAG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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