NTTFS4930NTWG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

7.2A

Power Dissipation-Max :

790mW Ta 20.2W Tc

Terminal Form :

Flat

Rds On (Max) @ Id, Vgs :

23m Ω @ 6A, 10V

Power Dissipation :

2.06W

Radiation Hardening :

No

Terminal Position :

Dual

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

45A

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta 23A Tc

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

476pF @ 15V

Number of Pins :

8

Number of Elements :

1

JESD-30 Code :

S-PDSO-F5

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 4.5V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Continuous Drain Current (ID) :

9.6A

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerWDFN

Fall Time (Typ) :

3.6 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.03Ohm

Lead Free :

Lead Free

Number of Terminations :

5

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Factory Lead Time :

18 Weeks

Rise Time :

26.6ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA