NTTFS4929NTWG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Surface Mount :

yes

Number of Elements :

1

Terminal Position :

Dual

Power Dissipation-Max :

810mW Ta 22.3W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerWDFN

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

11m Ω @ 10A, 10V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 15V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

JESD-609 Code :

e3

Power Dissipation :

2.11W

Element Configuration :

Single

Terminal Form :

Flat

Fall Time (Typ) :

6.1 ns

Number of Pins :

8

Published :

2012

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

34A

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Factory Lead Time :

18 Weeks

Number of Terminations :

5

JESD-30 Code :

S-PDSO-F5

Lead Free :

Lead Free

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Rise Time :

24ns

Current - Continuous Drain (Id) @ 25°C :

6.6A Ta 34A Tc

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

69A