NTTFS4929NTWG
- Mfr.Part #
- NTTFS4929NTWG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.6A/34A 8WDFN
- Stock
- 15,980
- In Stock :
- 15,980
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 810mW Ta 22.3W Tc
- Number of Pins :
- 8
- Rise Time :
- 24ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 8.8nC @ 4.5V
- Package / Case :
- 8-PowerWDFN
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 6.6A Ta 34A Tc
- Terminal Finish :
- Tin (Sn)
- Published :
- 2012
- Number of Terminations :
- 5
- Fall Time (Typ) :
- 6.1 ns
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 10A, 10V
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 34A
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 69A
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Radiation Hardening :
- No
- Factory Lead Time :
- 18 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Power Dissipation :
- 2.11W
- Pin Count :
- 8
- JESD-30 Code :
- S-PDSO-F5
- Terminal Position :
- Dual
- Datasheets
- NTTFS4929NTWG

N-Channel Tape & Reel (TR) 11m Ω @ 10A, 10V ±20V 920pF @ 15V 8.8nC @ 4.5V 8-PowerWDFN
NTTFS4929NTWG Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 920pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 34A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.As far as peak drain current is concerned, its maximum pulsed current is 69A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NTTFS4929NTWG Features
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 30V voltage
based on its rated peak drain current 69A.
NTTFS4929NTWG Applications
There are a lot of ON Semiconductor
NTTFS4929NTWG applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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