NTTFS4929NTAG
- Mfr.Part #
- NTTFS4929NTAG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.6A/34A 8WDFN
- Stock
- 18,339
- In Stock :
- 18,339
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Terminal Position :
- Dual
- JESD-30 Code :
- S-PDSO-F5
- Fall Time (Typ) :
- 6.1 ns
- Current - Continuous Drain (Id) @ 25°C :
- 6.6A Ta 34A Tc
- Published :
- 2012
- Pulsed Drain Current-Max (IDM) :
- 69A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 10A, 10V
- Power Dissipation-Max :
- 810mW Ta 22.3W Tc
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2.11W
- Rise Time :
- 24ns
- Pin Count :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Terminal Form :
- Flat
- Package / Case :
- 8-PowerWDFN
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Number of Terminations :
- 5
- Drain to Source Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 8.8nC @ 4.5V
- Continuous Drain Current (ID) :
- 34A
- Case Connection :
- DRAIN
- Factory Lead Time :
- 2 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 15V
- Datasheets
- NTTFS4929NTAG

N-Channel Tape & Reel (TR) 11m Ω @ 10A, 10V ±20V 920pF @ 15V 8.8nC @ 4.5V 8-PowerWDFN
NTTFS4929NTAG Overview
A device's maximum input capacitance is 920pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.Its maximum pulsed drain current is 69A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTTFS4929NTAG Features
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 30V voltage
based on its rated peak drain current 69A.
NTTFS4929NTAG Applications
There are a lot of ON Semiconductor
NTTFS4929NTAG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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