NTTFS4824NTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Published :

2009

Number of Pins :

8

Rise Time :

38ns

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Width :

3.15mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

660mW Ta 46.3W Tc

Terminal Position :

Dual

Feedback Cap-Max (Crss) :

255 pF

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

5

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

20.6A

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2363pF @ 12V

Factory Lead Time :

2 Weeks

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Pin Count :

8

Drain Current-Max (Abs) (ID) :

69A

Lead Free :

Lead Free

Fall Time (Typ) :

5.5 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

4.1W

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0075Ohm

Turn-Off Delay Time :

18 ns

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Mount :

Surface Mount

Turn On Delay Time :

13 ns

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta 69A Tc

Length :

3.15mm

Nominal Vgs :

1.9 V

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

S-PDSO-F5

ECCN Code :

EAR99

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 11.5V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Height :

750μm

Transistor Application :

SWITCHING

Package / Case :

8-PowerWDFN

JESD-609 Code :

e3

FET Type :

N-Channel