NTTFS3A08PZTAG
- Mfr.Part #
- NTTFS3A08PZTAG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 9A 8WDFN
- Stock
- 17,108
- In Stock :
- 17,108
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 165 ns
- Rds On (Max) @ Id, Vgs :
- 6.7m Ω @ 12A, 4.5V
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Rise Time :
- 56ns
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 8V
- Factory Lead Time :
- 23 Weeks
- Power Dissipation :
- 2.2W
- Number of Pins :
- 8
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Published :
- 2012
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 10V
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 9A
- Turn On Delay Time :
- 12 ns
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- -20V
- Drain Current-Max (Abs) (ID) :
- 22A
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Turn-Off Delay Time :
- 250 ns
- FET Type :
- P-Channel
- Pin Count :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Package / Case :
- 8-PowerWDFN
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Drain to Source Voltage (Vdss) :
- 20V
- Power Dissipation-Max :
- 840mW Ta
- Datasheets
- NTTFS3A08PZTAG

P-Channel Tape & Reel (TR) 6.7m Ω @ 12A, 4.5V ±8V 5000pF @ 10V 56nC @ 4.5V 20V 8-PowerWDFN
NTTFS3A08PZTAG Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5000pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -20V.There is no drain current on this device since the maximum continuous current it can conduct is 22A.As a result of its turn-off delay time, which is 250 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
NTTFS3A08PZTAG Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 250 ns
a 20V drain to source voltage (Vdss)
NTTFS3A08PZTAG Applications
There are a lot of ON Semiconductor
NTTFS3A08PZTAG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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