NTTFS3A08PZTAG

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Mfr.Part #
NTTFS3A08PZTAG
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET P-CH 20V 9A 8WDFN
Stock
17,108
In Stock :
17,108

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
165 ns
Rds On (Max) @ Id, Vgs :
6.7m Ω @ 12A, 4.5V
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 3 days ago)
Vgs (Max) :
±8V
Vgs(th) (Max) @ Id :
1V @ 250μA
Rise Time :
56ns
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
8V
Factory Lead Time :
23 Weeks
Power Dissipation :
2.2W
Number of Pins :
8
Element Configuration :
Single
JESD-609 Code :
e3
Published :
2012
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
5000pF @ 10V
Radiation Hardening :
No
Surface Mount :
yes
Continuous Drain Current (ID) :
9A
Turn On Delay Time :
12 ns
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
-20V
Drain Current-Max (Abs) (ID) :
22A
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
9A Ta
Turn-Off Delay Time :
250 ns
FET Type :
P-Channel
Pin Count :
8
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Package / Case :
8-PowerWDFN
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Drain to Source Voltage (Vdss) :
20V
Power Dissipation-Max :
840mW Ta
Datasheets
NTTFS3A08PZTAG
Introducing Transistors - FETs, MOSFETs - Single onsemi NTTFS3A08PZTAG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerWDFN, NTTFS3A08PZTAG pinout, NTTFS3A08PZTAG datasheet PDF, NTTFS3A08PZTAG amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTTFS3A08PZTAG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTTFS3A08PZTAG


P-Channel Tape & Reel (TR) 6.7m Ω @ 12A, 4.5V ±8V 5000pF @ 10V 56nC @ 4.5V 20V 8-PowerWDFN

NTTFS3A08PZTAG Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5000pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -20V.There is no drain current on this device since the maximum continuous current it can conduct is 22A.As a result of its turn-off delay time, which is 250 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).

NTTFS3A08PZTAG Features


a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 250 ns
a 20V drain to source voltage (Vdss)


NTTFS3A08PZTAG Applications


There are a lot of ON Semiconductor
NTTFS3A08PZTAG applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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