NTS2101PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SC-70, SOT-323

Number of Elements :

1

Lead Free :

Lead Free

Radiation Hardening :

No

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

1.4A Ta

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Element Configuration :

Single

Resistance :

65mOhm

Height :

900μm

Surface Mount :

yes

Length :

2.2mm

Pbfree Code :

yes

Vgs (Max) :

±8V

Rds On (Max) @ Id, Vgs :

100m Ω @ 1A, 4.5V

Rise Time :

15ns

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.35mm

Published :

1998

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation :

290mW

Drain to Source Breakdown Voltage :

-8V

Number of Terminations :

3

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

15 ns

Nominal Vgs :

-700 mV

Voltage - Rated DC :

-8V

Gate to Source Voltage (Vgs) :

8V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

1.4A

Turn On Delay Time :

6.2 ns

Vgs(th) (Max) @ Id :

700mV @ 250μA

Peak Reflow Temperature (Cel) :

260

Current Rating :

-1.4A

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 5V

Terminal Form :

Gull wing

FET Type :

P-Channel

Threshold Voltage :

-700mV

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 8V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

290mW Ta

Turn-Off Delay Time :

26 ns