NTRV4101PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rise Time :

12.6ns

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Height :

1.01mm

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Length :

3.04mm

Power Dissipation :

1.25W

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Terminations :

3

Continuous Drain Current (ID) :

3.2A

Radiation Hardening :

No

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

420mW Ta

Vgs (Max) :

±8V

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.085Ohm

Width :

1.4mm

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 10V

Gate to Source Voltage (Vgs) :

8V

FET Type :

P-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Factory Lead Time :

8 Weeks

Pin Count :

3

Turn-Off Delay Time :

30.2 ns

Rds On (Max) @ Id, Vgs :

85m Ω @ 1.6A, 4.5V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Fall Time (Typ) :

21 ns

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

7.5 ns

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Pbfree Code :

yes

Number of Elements :

1

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

2.4A

Mounting Type :

Surface Mount