NTR5103NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

Continuous Drain Current (ID) :

260mA

Turn-Off Delay Time :

4.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 240mA, 10V

FET Type :

N-Channel

Height :

1.11mm

Published :

2014

Number of Elements :

1

Fall Time (Typ) :

3.6 ns

Number of Channels :

1

Terminal Form :

Gull wing

Number of Pins :

3

JESD-609 Code :

e3

Power Dissipation :

300mW

Contact Plating :

Tin

Factory Lead Time :

4 Weeks

Rise Time :

1.2ns

Power Dissipation-Max :

300mW Ta

Gate Charge (Qg) (Max) @ Vgs :

0.81nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 25V

Mounting Type :

Surface Mount

Turn On Delay Time :

1.7 ns

Current - Continuous Drain (Id) @ 25°C :

260mA Ta

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain to Source Breakdown Voltage :

60V

Max Junction Temperature (Tj) :

150°C

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

0.26A

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.6V @ 250μA

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual