NTR2101PT1G
- Mfr.Part #
- NTR2101PT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 8V SOT23-3
- Stock
- 1,951
- In Stock :
- 1,951
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 1173pF @ 4V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 15.75 ns
- Height :
- 1.01mm
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 38 ns
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 3.5A, 4.5V
- Terminal Position :
- Dual
- Resistance :
- 39mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- -3.7A
- Power Dissipation :
- 960mW
- Drain to Source Breakdown Voltage :
- -8V
- Vgs (Max) :
- ±8V
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Power Dissipation-Max :
- 960mW Ta
- Gate to Source Voltage (Vgs) :
- 8V
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -8V
- Number of Elements :
- 1
- Width :
- 1.4mm
- Surface Mount :
- yes
- Factory Lead Time :
- 13 Weeks
- Length :
- 3.04mm
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Threshold Voltage :
- -1V
- Turn On Delay Time :
- 7.4 ns
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Rise Time :
- 15.75ns
- Number of Terminations :
- 3
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 3.7A
- Datasheets
- NTR2101PT1G

P-Channel Tape & Reel (TR) 52m Ω @ 3.5A, 4.5V ±8V 1173pF @ 4V 15nC @ 4.5V TO-236-3, SC-59, SOT-23-3
The NTR2101PT1G is a P-channel Small-signal MOSFET offers -8V drain source voltage and -3.7A continuous drain current. It is suitable for DC-to-DC converters, high side load switch, cellular phone, notebook, PDAs. Here are some of the features of NTR2101PT1G:
Leading Trench technology for low RDS (ON); Surface-mount for small footprint (3 x 3mm); -1.8V Rated for low voltage gate drive; -55 to 150 ℃ Operating junction temperature range.
NTR2101PT1G Features
● Leading Trench Technology for Low RDS(on)
● ?1.8 V Rated for Low Voltage Gate Drive
● SOT?23 Surface Mount for Small Footprint (3 x 3 mm)
● This is a Pb?Free Device
● ROHS3 Compliant
● Lead Free
NTR2101PT1G Applications
● High Side Load Switch
● DC?DC Conversion
● Cell Phone, Notebook, PDAs, etc.
● Power Management
● Computers & Computer Peripherals
● Consumer Electronics
● Industrial
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NTR2101PT1 | onsemi | 5,408 | MOSFET P-CH 8V 3.7A SOT23-3 |
















