NTQS6463R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation-Max :

930mW Ta

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pbfree Code :

No

FET Type :

P-Channel

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

6.8A Ta

Drain-source On Resistance-Max :

0.02Ohm

Drain Current-Max (Abs) (ID) :

5.5A

Time@Peak Reflow Temperature-Max (s) :

30

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Terminal Finish :

TIN LEAD

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

240

JESD-609 Code :

e0

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

20V

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Surface Mount :

yes

Vgs (Max) :

±12V

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Rds On (Max) @ Id, Vgs :

20m Ω @ 6.8A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 5V

Operating Mode :

ENHANCEMENT MODE