NTP90N02G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

2.12pF @ 20V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 90A, 10V

Drain to Source Voltage (Vdss) :

24V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

733 mJ

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Number of Elements :

1

Packaging :

Tube

Drain-source On Resistance-Max :

0.0058ohm

Current - Continuous Drain (Id) @ 25°C :

90A Ta

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

200A

Vgs (Max) :

±20V

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

24V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

MATTE TIN

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

90A

Power Dissipation-Max :

85W Tc

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

3

Pin Count :

3

JEDEC-95 Code :

TO-220AB