NTP85N03G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 40A, 10V

Drain to Source Voltage (Vdss) :

28V

Power Dissipation-Max :

80W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2.15pF @ 24V

Drain Current-Max (Abs) (ID) :

15A

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

DS Breakdown Voltage-Min :

60V

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

61 mJ

Pbfree Code :

No

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Pin Count :

3

Drain-source On Resistance-Max :

0.0068Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

45A

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)