NTP18N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Avalanche Energy Rating (Eas) :

61 mJ

Vgs (Max) :

±20V

Element Configuration :

Single

RoHS Status :

Non-RoHS Compliant

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn80Pb20)

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

45A

Drain-source On Resistance-Max :

0.09Ohm

Rds On (Max) @ Id, Vgs :

90m Ω @ 7.5A, 10V

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

48.4W Tc

Fall Time (Typ) :

13 ns

Peak Reflow Temperature (Cel) :

240

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

15A

Voltage - Rated DC :

60V

Case Connection :

DRAIN

Current Rating :

15A

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Turn-Off Delay Time :

14 ns

Number of Elements :

1

Pin Count :

3

Power Dissipation :

48.4W

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Reach Compliance Code :

not_compliant

Rise Time :

25ns

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Mount :

Through Hole

FET Type :

N-Channel

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Drain to Source Breakdown Voltage :

60V