NTP13N10G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Published :

2006

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

100V

Avalanche Energy Rating (Eas) :

85 mJ

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Number of Elements :

1

Turn-Off Delay Time :

20 ns

Case Connection :

DRAIN

Power Dissipation :

64.7W

Lead Free :

Lead Free

Current Rating :

13A

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

165m Ω @ 6.5A, 10V

Power Dissipation-Max :

64.7W Tc

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Fall Time (Typ) :

36 ns

Packaging :

Tube

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Rise Time :

40ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

13A

Number of Terminations :

3

Vgs (Max) :

±20V

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.165Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING