NTP13N10
- Mfr.Part #
- NTP13N10
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 13A TO220AB
- Stock
- 10,786
- In Stock :
- 10,786
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- No
- Avalanche Energy Rating (Eas) :
- 85 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.165Ohm
- Voltage - Rated DC :
- 100V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lead Free :
- Contains Lead
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- HTS Code :
- 8541.29.00.95
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 25V
- Continuous Drain Current (ID) :
- 13A
- Turn-Off Delay Time :
- 20 ns
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Element Configuration :
- Single
- JESD-609 Code :
- e0
- Package / Case :
- TO-220-3
- Rise Time :
- 40ns
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- 240
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Current Rating :
- 13A
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Drain to Source Breakdown Voltage :
- 100V
- Power Dissipation :
- 64.7W
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 6.5A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 64.7W Tc
- Fall Time (Typ) :
- 36 ns
- RoHS Status :
- Non-RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Published :
- 2006
- Datasheets
- NTP13N10

N-Channel Tube 165m Ω @ 6.5A, 10V ±20V 550pF @ 25V 20nC @ 10V TO-220-3
NTP13N10 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 85 mJ.A device's maximal input capacitance is 550pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 13A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
NTP13N10 Features
the avalanche energy rating (Eas) is 85 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
NTP13N10 Applications
There are a lot of ON Semiconductor
NTP13N10 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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