NTP125N02RG

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Mfr.Part #
NTP125N02RG
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 24V 15.9A TO220AB
Stock
48,598
In Stock :
48,598

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
COMMERCIAL
Drain-source On Resistance-Max :
0.0062Ohm
Drain Current-Max (Abs) (ID) :
95A
Drain to Source Voltage (Vdss) :
24V
Package / Case :
TO-220-3
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id :
2V @ 250μA
DS Breakdown Voltage-Min :
25V
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
15.9A Ta
Input Capacitance (Ciss) (Max) @ Vds :
3.44pF @ 20V
Power Dissipation-Max :
1.98W Ta 113.6W Tc
JEDEC-95 Code :
TO-220AB
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Pulsed Drain Current-Max (IDM) :
250A
Pbfree Code :
No
Avalanche Energy Rating (Eas) :
120 mJ
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 4.5V
Terminal Finish :
MATTE TIN
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
JESD-30 Code :
R-PSFM-T3
Number of Terminations :
3
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Pin Count :
3
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Through Hole
Surface Mount :
No
Transistor Application :
SWITCHING
Datasheets
NTP125N02RG
Introducing Transistors - FETs, MOSFETs - Single onsemi NTP125N02RG from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, NTP125N02RG pinout, NTP125N02RG datasheet PDF, NTP125N02RG amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTP125N02RG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTP125N02RG


N-Channel Tube 4.6m Ω @ 20A, 10V ±20V 3.44pF @ 20V 28nC @ 4.5V 24V TO-220-3

NTP125N02RG Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 120 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3.44pF @ 20V.There is no drain current on this device since the maximum continuous current it can conduct is 95A.There is a peak drain current of 250A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 25V, it should remain above the 25V level.The transistor must receive a 24V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NTP125N02RG Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 250A.
a 24V drain to source voltage (Vdss)


NTP125N02RG Applications


There are a lot of Rochester Electronics, LLC
NTP125N02RG applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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