NTK3134NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Terminal Form :

Flat

Published :

2006

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

6.7 ns

Width :

850μm

Current - Continuous Drain (Id) @ 25°C :

750mA Ta

Fall Time (Typ) :

4.8 ns

Pin Count :

3

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

350m Ω @ 890mA, 4.5V

Resistance :

200mOhm

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

890mA

Length :

1.25mm

Drain Current-Max (Abs) (ID) :

0.89A

Rise Time :

4.8ns

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Number of Elements :

1

JESD-609 Code :

e3

Package / Case :

SOT-723

Radiation Hardening :

No

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

6V

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 16V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±6V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Element Configuration :

Single

ECCN Code :

EAR99

Power Dissipation :

310mW

Threshold Voltage :

1.2V

Pbfree Code :

yes

Turn-Off Delay Time :

17.3 ns

Contact Plating :

Tin

Height :

550μm

Power Dissipation-Max :

310mW Ta