NTHS5443T1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Voltage - Rated DC :

-20V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Vgs (Max) :

±12V

Gate to Source Voltage (Vgs) :

12V

Package / Case :

8-SMD, Flat Lead

Element Configuration :

Single

Current Rating :

-3.6A

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

-20V

Length :

3.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

14 ns

Number of Pins :

8

Power Dissipation :

1.3W

Turn On Delay Time :

8.5 ns

Terminal Form :

C BEND

Lead Free :

Lead Free

Power Dissipation-Max :

1.3W Ta

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Peak Reflow Temperature (Cel) :

260

Height :

1.1mm

Factory Lead Time :

2 Weeks

Continuous Drain Current (ID) :

4.9A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Pbfree Code :

yes

Published :

2005

Radiation Hardening :

No

Width :

1.7mm

Mounting Type :

Surface Mount

Pin Count :

8

Terminal Position :

Dual

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

600mV @ 250μA

Rise Time :

14ns

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.6A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Turn-Off Delay Time :

38 ns

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.065Ohm