NTHS2101PT1
- Mfr.Part #
- NTHS2101PT1
- Manufacturer
- onsemi
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET P-CH 8V 5.4A CHIPFET
- Stock
- 1,805
- In Stock :
- 1,805
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- Peak Reflow Temperature (Cel) :
- 240
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 5.4A, 4.5V
- Terminal Form :
- C BEND
- DS Breakdown Voltage-Min :
- 8V
- JESD-30 Code :
- R-XDSO-C8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 8
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.025Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tj
- Vgs (Max) :
- ±8V
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- RoHS Status :
- Non-RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 7.5A
- Terminal Finish :
- TIN LEAD
- Package / Case :
- 8-SMD, Flat Lead
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 8
- JESD-609 Code :
- e0
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pbfree Code :
- No
- Drain Current-Max (Abs) (ID) :
- 5.4A
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Surface Mount :
- yes
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.4pF @ 6.4V
- Drain to Source Voltage (Vdss) :
- 8V
- Power Dissipation-Max :
- 1.3W Ta
- Datasheets
- NTHS2101PT1

P-Channel Tape & Reel (TR) 25m Ω @ 5.4A, 4.5V ±8V 2.4pF @ 6.4V 30nC @ 4.5V 8V 8-SMD, Flat Lead
NTHS2101PT1 Overview
A device's maximum input capacitance is 2.4pF @ 6.4V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 5.4A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 7.5A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 8V.To operate this transistor, you need to apply a 8V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
NTHS2101PT1 Features
based on its rated peak drain current 7.5A.
a 8V drain to source voltage (Vdss)
NTHS2101PT1 Applications
There are a lot of Rochester Electronics, LLC
NTHS2101PT1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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