NTH4L040N65S3F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

65A

Gate Charge (Qg) (Max) @ Vgs :

158nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

162.5A

Series :

FRFET®, SuperFET® III

Terminal Position :

Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 2.1mA

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

4

JESD-30 Code :

R-PSFM-T4

Surface Mount :

No

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

1009 mJ

Rds On (Max) @ Id, Vgs :

40m Ω @ 32.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5940pF @ 400V

Drain-source On Resistance-Max :

0.04Ohm

Operating Temperature :

-55°C~150°C TJ

Configuration :

Single

Factory Lead Time :

18 Weeks

DS Breakdown Voltage-Min :

650V

Vgs (Max) :

±30V

Package / Case :

TO-247-4

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

650V

Power Dissipation-Max :

446W Tc

Transistor Application :

SWITCHING