NTH4L022N120M3S

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Mfr.Part #
NTH4L022N120M3S
Manufacturer
onsemi
Package / Case
TO-247-4
Datasheet
Download
Description
SIC MOS TO247-4L 22MOHM 1200V
Stock
184
In Stock :
184

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-247-4L
FET Type :
N-Channel
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
30mOhm @ 40A, 18V
Brand :
onsemi
Rise Time :
24 ns
Package Type :
TO-247-4L
Power Dissipation (Max) :
352W (Tc)
Maximum Operating Temperature :
+ 175 C
Operating Temperature :
-55°C ~ 175°C (TJ)
Channel Mode :
Enhancement
Pin Count :
4
FET Feature :
-
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
3175 pF @ 800 V
Manufacturer :
onsemi
Product Status :
Active
Mounting Type :
Through Hole
Continuous Drain Current Id :
68
Power Dissipation :
352
Vgs (Max) :
+22V, -10V
Drain to Source Voltage (Vdss) :
1200 V
RoHS :
Details
Subcategory :
MOSFETs
Product Type :
MOSFET
Package / Case :
TO-247-4
Channel Type :
N
Mounting Style :
Through Hole
Transistor Polarity :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
151 nC @ 18 V
Number of Elements per Chip :
1
Vgs(th) (Max) @ Id :
4.4V @ 20mA
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
68A (Tc)
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On, Min Rds On) :
18V
Number of Channels :
1 Channel
Datasheets
NTH4L022N120M3S
Introducing Transistors - FETs, MOSFETs - Single onsemi NTH4L022N120M3S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Through Hole, Package / Case:TO-247-4, Number of Channels:1 Channel, NTH4L022N120M3S pinout, NTH4L022N120M3S datasheet PDF, NTH4L022N120M3S amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTH4L022N120M3S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTH4L022N120M3S


N-Channel Tube 30mOhm @ 40A, 18V +22V, -10V 3175 pF @ 800 V 151 nC @ 18 V 1200 V TO-247-4

NTH4L022N120M3S Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3175 pF @ 800 V.This transistor requires a drain-source voltage (Vdss) of 1200 V.

NTH4L022N120M3S Features


a 1200 V drain to source voltage (Vdss)


NTH4L022N120M3S Applications


There are a lot of onsemi
NTH4L022N120M3S applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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