NTF6P02T3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

7 ns

Power Dissipation :

8.3W

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

8V

Power Dissipation-Max :

8.3W Ta

Resistance :

44mOhm

Factory Lead Time :

14 Weeks

Number of Terminations :

4

Width :

3.7mm

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Transistor Application :

SWITCHING

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Drain to Source Breakdown Voltage :

-20V

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 16V

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin (Sn)

Current Rating :

-6A

Pulsed Drain Current-Max (IDM) :

35A

Length :

6.7mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

75 ns

Pbfree Code :

yes

Rise Time :

25ns

Height :

1.65mm

Rds On (Max) @ Id, Vgs :

50m Ω @ 6A, 4.5V

Element Configuration :

Single

Continuous Drain Current (ID) :

10A

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Dual Supply Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Case Connection :

DRAIN

ECCN Code :

EAR99

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Voltage - Rated DC :

-20V

FET Type :

P-Channel

Fall Time (Typ) :

50 ns

Published :

2007

Pin Count :

4

Number of Pins :

4

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-700mV

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)