NTF5P03T3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.56W Ta

Time@Peak Reflow Temperature-Max (s) :

40

Resistance :

100MOhm

Case Connection :

DRAIN

Element Configuration :

Single

Rise Time :

45ns

Terminal Form :

Gull wing

Power Dissipation :

3.13W

Threshold Voltage :

-1.75V

Current Rating :

-5.2A

Transistor Application :

SWITCHING

Turn-Off Delay Time :

23 ns

Surface Mount :

yes

Fall Time (Typ) :

24 ns

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

16 ns

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Published :

2006

FET Type :

P-Channel

Height :

1.65mm

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

100m Ω @ 5.2A, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Factory Lead Time :

15 Weeks

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drain to Source Voltage (Vdss) :

30V

Pin Count :

4

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

-30V

Avalanche Energy Rating (Eas) :

250 mJ

Number of Elements :

1

Width :

3.7mm

Continuous Drain Current (ID) :

5A

Vgs (Max) :

±20V

Lead Free :

Lead Free

Length :

6.7mm

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Package / Case :

TO-261-4, TO-261AA

Number of Pins :

4

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

3.7A

Voltage - Rated DC :

-30V

JESD-609 Code :

e3