NTE492

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

200 V

Terminal Position :

BOTTOM

JESD-30 Code :

O-PBCY-W3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Technology :

MOSFET (Metal Oxide)

Drain-source On Resistance-Max :

6.4 Ω

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Package :

Bag

Vgs (Max) :

±20V

FET Feature :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

60 pF @ 25 V

Number of Elements :

1

Package Shape :

Round

Qualification Status :

Not Qualified

Supplier Device Package :

TO-92

Power Dissipation (Max) :

350mW (Ta)

Configuration :

Single

Manufacturer :

NTE Electronics

Vgs(th) (Max) @ Id :

3V @ 1mA

DS Breakdown Voltage-Min :

200 V

Terminal Form :

Wire

Number of Terminals :

3

Current - Continuous Drain (Id) @ 25°C :

250mA (Tj)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Series :

-

HTS Code :

8541.21.00.95

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED