NTE491T
- Mfr.Part #
- NTE491T
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-237AA
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 60V 310MA TO237
- Stock
- 404
- In Stock :
- 404
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 165.1 mm
- Power Dissipation :
- 1(W)
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Supplier Device Package :
- TO-237
- Surface Mount :
- No
- Continuous Drain Current (ID) :
- 310 mA
- Mount :
- Through Hole
- Gate-Source Voltage (Max) :
- 15(V)
- Drain-Source On-Volt :
- 60(V)
- Width :
- 95.25 mm
- Input Capacitance :
- 60 pF
- RoHS :
- Compliant
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- -
- Number of Pins :
- 3
- Operating Temperature Classification :
- Military
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 500mA, 10V
- Mounting Type :
- Through Hole
- Min Operating Temperature :
- -55 °C
- Gate to Source Voltage (Vgs) :
- 15 V
- Number of Terminals :
- 3
- Pin Count :
- 3 +Tab
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- O-PBCY-T3
- Reach Compliance Code :
- Unknown
- Type :
- Power MOSFET
- JEDEC-95 Code :
- TO-237
- Continuous Drain Current :
- 0.31(A)
- Rad Hardened :
- No
- Manufacturer :
- NTE Electronics
- Power Dissipation (Max) :
- 1W (Ta)
- Product Status :
- Active
- Feedback Cap-Max (Crss) :
- 5 pF
- DS Breakdown Voltage-Min :
- 60 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Vgs (Max) :
- +15V, -300mV
- Mounting :
- Through Hole
- Package :
- Bag
- Polarity :
- N
- Series :
- -
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- Round
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Height :
- 6.35 mm
- Channel Mode :
- Enhancement
- Package / Case :
- TO-237AA
- Operating Temp Range :
- -55C to 150C
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 310mA (Ta)
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 60 V
- Weight :
- 4.535924 g
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 5 Ω
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V, 10V
- Technology :
- MOSFET (Metal Oxide)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Max Operating Temperature :
- 150 °C
- Input Capacitance (Ciss) (Max) @ Vds :
- 60 pF @ 25 V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- NTE491T

MOSFET (Metal Oxide) N-Channel 5Ohm @ 500mA, 10V +15V, -300mV 60 pF @ 25 V 60 V TO-237AA
NTE491T Overview
The maximum input capacitance of this device is 60 pF @ 25 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 310 mA.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60 V in order to operate.
NTE491T Features
a continuous drain current (ID) of 310 mA
a 60 V drain to source voltage (Vdss)
NTE491T Applications
There are a lot of NTE Electronics, Inc.
NTE491T applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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