NTE464

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.21.00.95

Power Dissipation-Max (Abs) :

0.3 W

Rds On (Max) @ Id, Vgs :

600Ohm @ 0A, 10V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 10A

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

25 V

JESD-30 Code :

O-MBCY-W4

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

5000 pF @ 10 V

Drain Current-Max (Abs) (ID) :

0.03 A

Pbfree Code :

yes

Operating Temperature :

175°C (TJ)

Package :

Bag

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Technology :

MOSFET (Metal Oxide)

Qualification Status :

Not Qualified

Configuration :

Single

Terminal Form :

Wire

Package Shape :

Round

Number of Terminals :

4

Package / Case :

TO-72-3

Transistor Element Material :

SILICON

Power Dissipation (Max) :

800mW (Tc)

Terminal Position :

BOTTOM

FET Feature :

Standard

FET Type :

P-Channel

Polarity/Channel Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

600 Ω

Surface Mount :

No

Reach Compliance Code :

Unknown

Feedback Cap-Max (Crss) :

1.3 pF

Subcategory :

Other Transistors

Drain to Source Voltage (Vdss) :

25 V

Transistor Application :

SWITCHING

Manufacturer :

NTE Electronics

Product Status :

Active

Series :

-

Supplier Device Package :

TO-72

Current - Continuous Drain (Id) @ 25°C :

10A

ECCN Code :

EAR99

Number of Elements :

1