NTE4153NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

950μm

Rise Time :

4.4ns

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

4.4 ns

FET Type :

N-Channel

Power Dissipation-Max :

300mW Tj

Published :

2006

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

6V

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 16V

Resistance :

230mOhm

Vgs (Max) :

±6V

Turn On Delay Time :

3.7 ns

Gate Charge (Qg) (Max) @ Vgs :

1.82nC @ 4.5V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

915mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

1.7mm

Nominal Vgs :

760 mV

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current - Continuous Drain (Id) @ 25°C :

915mA Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Pbfree Code :

yes

Element Configuration :

Single

Pin Count :

3

Current Rating :

915mA

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Form :

Flat

Power Dissipation :

300mW

Package / Case :

SC-89, SOT-490

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Threshold Voltage :

760mV

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Height :

800μm

Number of Pins :

3

Drain to Source Breakdown Voltage :

20V

Rds On (Max) @ Id, Vgs :

230m Ω @ 600mA, 4.5V

Voltage - Rated DC :

20V

Number of Terminations :

3

ECCN Code :

EAR99

Turn-Off Delay Time :

25 ns

Lead Free :

Lead Free

Radiation Hardening :

No

JESD-609 Code :

e3